Efficient non-vertical interband transitions in porous silicon

M. Cruz, M.R. Beltrán, C. Wang and J. Tagüeña-Martínez

Physica A: Statistical Mechanics and its Applications, 1997, vol. 241, issue 1, 382-385

Abstract: In this work, we study an inhomogeneous material, porous silicon (PS), using a supercell model and an s p3 s∗ tight-binding Hamiltonian. The interband non-vertical transitions are studied in two schemes, which consider different contributions within the intra-atomic approximation. The oscillator strength analysis as a function of the porosity reveals a significant enlargement of the optically active zone in the k-space, due to the localization of the wave function.

Keywords: Porous silicon; Electronic structure; Interband transitions; Localization (search for similar items in EconPapers)
Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:241:y:1997:i:1:p:382-385

DOI: 10.1016/S0378-4371(97)00111-8

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