Electrical resistivity of AgInSe2 films

D. Abdel-Hady and A.M. Salem

Physica A: Statistical Mechanics and its Applications, 1997, vol. 242, issue 1, 141-149

Abstract: Single-phase AgInSe2 ingot material, having the tetragonal chalcopyrite structure, was prepared by direct fusion of the constituent elements in vacuum-sealed silica tubes. Nearly stoichiometric films were prepared by thermal evaporation of the bulk material using a single source in 10−3 Pa vacuum on glass substrates. The chemical composition of the films was determined by energy-dispersive X-ray spectrometry, where the chemical formula could be represented by Ag(1−x)In(1−x2)Se2(1+x)with x ⩽ 0.02.

Date: 1997
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:242:y:1997:i:1:p:141-149

DOI: 10.1016/S0378-4371(97)00200-8

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