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Asymmetric nonlinear amplitude in patterns of porous silicon

A.Ferreira da Silva, R.R. Rosa, P.W.A. Machado, F.M. Ramos, C.Rodrigues Neto, E.L.S. Roman and E. Veje

Physica A: Statistical Mechanics and its Applications, 2000, vol. 283, issue 1, 223-227

Abstract: A gradient pattern analysis is used to report a phenomenogical evidence of asymmetric nonlinear spatial distribution of porous silicon structures. We used a canonical sample set obtained from scanning force microscopy. Due to the high sensitivity of the gradient field operator, it is possible to correlate the photoluminescence performance of porous silicon with different degree of asymmetries and spatial nonlinearity. A generalization of this new approach to quantify nonlinear amplitude fragmentation in complex lattices is proposed.

Keywords: Gradient pattern analysis; Symmetry and structure; Spatial nonlinearity; Semiconductors; Surface theory (search for similar items in EconPapers)
Date: 2000
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:283:y:2000:i:1:p:223-227

DOI: 10.1016/S0378-4371(00)00157-6

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