Giant persistent photoconductivity induced crossover from strong to weak localization in Si-δ-doped GaAs compensated with Be acceptors

K.-J. Friedland, M. Hoerike, R. Hey, I. Shlimak and L. Resnick

Physica A: Statistical Mechanics and its Applications, 2001, vol. 302, issue 1, 375-381

Abstract: We present the results of measurements of two-dimensional electron transport in Si-δ-doped GaAs samples compensated with Be acceptors. It is shown that the temperature dependence of longitudinal resistivity Rxx in the interval 1K–100mK is well described by the variable-range-hopping mechanism Rxx(T)=R0exp[(T0/T)1/2] peculiar for strongly localized electrons. Transitional illumination of these samples by a red light causes a persistent photoconductivity (PPC), which is fully determined by irreversible increase of electron mobility. As a result of illumination, parameter T0 decreases which leads to a giant exponential increase of PPC at low temperatures. After high dose of illumination, the temperature dependence of conductivity changes from exponential to logarithmic law, which can be considered as a crossover from strong to weak electron localization.

Keywords: Two-dimensional electrons; Magnetotransport; Localisation (search for similar items in EconPapers)
Date: 2001
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:302:y:2001:i:1:p:375-381

DOI: 10.1016/S0378-4371(01)00456-3

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