Nonequilibrium first-order phase transition in semiconductor system driven by colored noise

Yu.V. Gudyma

Physica A: Statistical Mechanics and its Applications, 2004, vol. 331, issue 1, 61-68

Abstract: We examine the mechanisms of action of colored multiplicative noise in a positionally disordered semiconductor with Moss–Burstein shift. It is shown that the action of multiplicative noise causes nonequilibrium first-order phase transition of the disorder–order-type in electron subsystem of semiconductor. There are relatively little changes in a condensed matter at such phase transitions, but the electron subsystem undergoes a strong reorganization. The steady photocarriers concentration distribution is studied within a unified colored-noise approximation.

Keywords: Colored multiplicative noise; Nonequilibrium first-order phase transition; Stationary probability density (search for similar items in EconPapers)
Date: 2004
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Citations: View citations in EconPapers (2)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:331:y:2004:i:1:p:61-68

DOI: 10.1016/j.physa.2003.09.017

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