Epitaxial growth with impurity dimer deposition

Sang B. Lee and Taegwen Hwangbo

Physica A: Statistical Mechanics and its Applications, 2004, vol. 337, issue 3, 470-480

Abstract: We investigate an influence of impurity dimers on the profile of monomer and island densities and the dynamic scaling of island size distributions when small amount of dimers are deposited with the flux of monomers in epitaxial growth. The rate equations are solved numerically using the fourth-order Runge–Kutta algorithm. The computer simulations are also carried out for various dimer rates and for various growth models. We find that the density profile of islands displays five distinct regions, i.e., the deposition-dominated region I (DDR-I), the competing region in which dimer-deposition competes with nucleation, the intermediate region, the DDR-II, and finally the coalescence region. Monte Carlo data exhibit fairly good agreements with the rate equation predictions of the point–island model up to DDR-II. With negligibly small rate of dimers, the dynamic scaling function of the island size distributions appears to vary considerably, implying that impurity dimers alter significantly the growth mechanism.

Keywords: Molecular beam epitaxy; Impurity dimer deposition; Monte Carlo; Density profile; Scaling laws (search for similar items in EconPapers)
Date: 2004
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:337:y:2004:i:3:p:470-480

DOI: 10.1016/j.physa.2004.02.003

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