Structure and magnetic properties of Mn4N thin films synthesized by plasma-based ion implantation

D. Vempaire, D. Fruchart, R. Gouttebarron, E.K. Hlil, S. Miraglia, L. Ortega and J. Pelletier

Physica A: Statistical Mechanics and its Applications, 2005, vol. 358, issue 1, 136-141

Abstract: Plasma-based ion implantation was used to synthesize the manganese nitride Mn4N by implanting nitrogen in manganese layers first deposited by sputtering assisted by multi-dipolar microwave plasma. The structural characterization of the layer has been performed using X-ray diffraction at grazing incidence and XPS. The magnetic properties have been measured using a SQUID susceptometer. In parallel, a FLAPW method has been used to calculate the theoretical magnetic state of Mn4N. The modeling results are compared with neutron diffraction and magnetization saturation measurements.

Keywords: Manganese; Nitride; Magnetic; Thin film (search for similar items in EconPapers)
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:358:y:2005:i:1:p:136-141

DOI: 10.1016/j.physa.2005.06.014

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