An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution

U.M.S. Costa, V.N. Freire, L.C. Malacarne, R.S. Mendes, S. Picoli , E.A. de Vasconcelos and E.F. da Silva

Physica A: Statistical Mechanics and its Applications, 2006, vol. 361, issue 1, 209-215

Abstract: In this work, we address modal parameter fluctuations in statistical distributions describing charge-to-breakdown (QBD) and/or time-to-breakdown (tBD) during the dielectric breakdown regime of ultra-thin oxides, which are of high interest for the advancement of electronic technology. We reobtain a generalized Weibull distribution (q-Weibull), which properly describes (tBD) data when oxide thickness fluctuations are present, in order to improve reliability assessment of ultra-thin oxides by time-to-breakdown (tBD) extrapolation and area scaling. The incorporation of fluctuations allows a physical interpretation of the q-Weibull distribution in connection with the Tsallis statistics. In support to our results, we analyze tBD data of SiO2-based MOS devices obtained experimentally and theoretically through a percolation model, demonstrating an advantageous description of the dielectric breakdown by the q-Weibull distribution.

Keywords: Weibull distribution; Dielectric breakdown; Reliability; MOS devices (search for similar items in EconPapers)
Date: 2006
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Citations: View citations in EconPapers (7)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:361:y:2006:i:1:p:209-215

DOI: 10.1016/j.physa.2005.07.017

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