Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices

Roberto da Silva, Gilson I. Wirth and Ralf Brederlow

Physica A: Statistical Mechanics and its Applications, 2006, vol. 362, issue 2, 277-288

Abstract: In this work, based on robust experimental results, we derive a novel theoretical probabilistic approach to model the low-frequency noise power S(f) in semiconductor devices. Using the proposed approach we obtained, analytically, the average of the integrated noise power Wp=∫fLfHS(f)df as a function of the frequency bandwidth [fL,fH], showing that 〈Wp〉∝ln2(fH/fL). The second moment and the relative error in Wp are also calculated. A numerical fit for the relative error was performed, showing that lower and upper bound estimates to noise power depend only on the ratio fH/fL.

Keywords: Numerical modeling; 1/f noise; CMOS devices (search for similar items in EconPapers)
Date: 2006
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Citations: View citations in EconPapers (1)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:362:y:2006:i:2:p:277-288

DOI: 10.1016/j.physa.2005.11.014

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