Validation of an extended hydrodynamic model for a submicron npn bipolar junction transistor

Orazio Muscato

Physica A: Statistical Mechanics and its Applications, 2006, vol. 365, issue 2, 409-428

Abstract: Transport phenomena in a submicron npn silicon bipolar junction transistor are described by using an 8-moment model for the electrons, combined with a solution of the drift–diffusion model for the holes.

Keywords: Theory of electron transport; Non-equilibrium thermodynamics; Bipolar transistors (search for similar items in EconPapers)
Date: 2006
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:365:y:2006:i:2:p:409-428

DOI: 10.1016/j.physa.2005.06.104

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