Superradiant dissipative tunneling in a double p–i–n semiconductor heterostructure with thermal injection of electrons

Eliade Stefanescu and Werner Scheid

Physica A: Statistical Mechanics and its Applications, 2007, vol. 374, issue 1, 203-210

Abstract: We propose a semiconductor device with two p–i–n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the second gate. The injection current is amplified by this reaction loop. In this way, the heat flow between the two junctions is partially transformed in superradiant power.

Keywords: Dissipation; Master equation; Fermions; Superradiance; p–i–n structure; Quantum dot (search for similar items in EconPapers)
Date: 2007
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://www.sciencedirect.com/science/article/pii/S0378437106008028
Full text for ScienceDirect subscribers only. Journal offers the option of making the article available online on Science direct for a fee of $3,000

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:374:y:2007:i:1:p:203-210

DOI: 10.1016/j.physa.2006.07.014

Access Statistics for this article

Physica A: Statistical Mechanics and its Applications is currently edited by K. A. Dawson, J. O. Indekeu, H.E. Stanley and C. Tsallis

More articles in Physica A: Statistical Mechanics and its Applications from Elsevier
Bibliographic data for series maintained by Catherine Liu ().