Dielectric properties of ferroelectric thin films with surface transition layers

Hui Chen, Tianquan Lü, Lian Cui and Wenwu Cao

Physica A: Statistical Mechanics and its Applications, 2008, vol. 387, issue 8, 1963-1971

Abstract: By taking into account surface transition layers (STL), the dielectric properties of ferroelectric thin films described by the transverse Ising model are discussed in the framework of the mean-field approximation. Functions of the intra-layer and inter-layer couplings are introduced to characterize STL, which makes the model more realistic compared to the previous treatment of surface layers using uniform surface exchange interactions and a transverse field. The effects of physical parameters on the dielectric properties are quantified. The results obtained indicate that STL has a very strong influence on the dielectric properties of ferroelectric thin films. Some of our theoretical results are in accordance with the available experimental data.

Keywords: Ferroelectric thin film; Transverse Ising model; Dielectric properties (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:387:y:2008:i:8:p:1963-1971

DOI: 10.1016/j.physa.2007.10.070

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