Thermoelectric transport properties through a T-shaped single quantum dot

R. Castellanos, R. Franco, J. Silva-Valencia and M.S. Figueira

Physica A: Statistical Mechanics and its Applications, 2010, vol. 389, issue 24, 5814-5821

Abstract: We study the thermopower, thermal conductance, electric conductance and the thermoelectric figure of merit for a gate-defined T-shaped single quantum dot (QD). The QD is solved in the limit of strong Coulombian repulsion U→∞, inside the dot, and the quantum wire is modeled on a tight-binding linear chain. We employ the X-boson approach for the Anderson impurity model to describe the localized level within the quantum dot. Our results are in qualitative agreement with recent experimental reports and other theoretical researches for the case of a quantum dot embedded into a conduction channel, employing analogies between the two systems. The results for the thermopower sign as a function of the gate voltage (associated with the quantum dot energy) are in agreement with a recent experimental result obtained for a suspended quantum dot. The thermoelectric figure of merit times temperature results indicates that, at low temperatures and in the crossover between the intermediate valence and Kondo regimes, the system might have practical applicability in the development of thermoelectric devices.

Keywords: Quantum dot; Kondo effect; Transport; X-boson; Thermoelectric and thermomagnetic effects (search for similar items in EconPapers)
Date: 2010
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:389:y:2010:i:24:p:5814-5821

DOI: 10.1016/j.physa.2010.09.002

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