Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

J.M. Sellier, S.M. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov and I. Dimov

Physica A: Statistical Mechanics and its Applications, 2014, vol. 398, issue C, 194-198

Abstract: We present a numerical study of the evolution of a wave packet in a nanoscale MOSFET featuring an ‘atomistic’ channel doping. Our two-dimensional Monte Carlo Wigner simulation results are compared against classical Boltzmann simulation results. We show that the quantum effects due to the presence of a scattering center are manifestly non-local affecting the wave propagation much farther than the geometric limit of the center. In particular the part of the channel close to the oxide interface remains blocked for transport, in contrast to the behavior predicted by classical Boltzmann propagation.

Keywords: Full quantum transport; Wigner equation; Boltzmann equation; Monte Carlo methods; Nanometer scaled devices; Single dopants (search for similar items in EconPapers)
Date: 2014
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Citations: View citations in EconPapers (1)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:398:y:2014:i:c:p:194-198

DOI: 10.1016/j.physa.2013.12.045

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