Tsallis non-extensive statistics and multifractal analysis of the dynamics of a fully-depleted MOSFET nano-device

I.P. Antoniades, G. Marinos, L.P. Karakatsanis, E.G. Pavlos, S.G. Stavrinides, D. Tassis and G.P. Pavlos

Physica A: Statistical Mechanics and its Applications, 2019, vol. 533, issue C

Abstract: In this study Tsallis non-extensive statistics and multifractal analysis for the physical description and understanding of the Random Telegraph Noise (RTN), observed in UTBB FD-SOI MOSFET current timeseries is presented. Specifically, we estimate the Tsallis q-triplet and q-entropy production, the Hurst exponent, the multifractal singular spectrum and other topological and dynamical characteristics of this MOSFET-current dynamics as a function of the drain voltage. The analysis shows the existence of microscopic intermittent turbulence and anomalous diffusion processes, underlying the noisy timeseries. The relevant results indicate the existence of a self-organized critical behavior manifested by a percolation mechanism and a fractional transport process. The multifractal character of the dynamics was demonstrated and explained by the maximization of the Tsallis q-entropy function. Final, our analysis revealed the existence of a non-equilibrium topological transition process, taking place when the drain voltage increases and satisfies the basic principles of Tsallis non-extensive statistical theory.

Keywords: Random telegraph noise (RTN); Low frequency noise (LFN); Non-extensive statistics; Non-gaussian dynamics; Anomalous diffusion; Tsallis q-triplet; Strange dynamics; UTBB FD-SOI MOSFET (search for similar items in EconPapers)
Date: 2019
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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:533:y:2019:i:c:s0378437119310672

DOI: 10.1016/j.physa.2019.121820

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