Charge-particles transport in semiconductors characterized by a generalized Langevin equation with a fractional noise

Guitian He, Yan Tian and Maokang Luo

Physica A: Statistical Mechanics and its Applications, 2019, vol. 535, issue C

Abstract: From the view of intrinsic noise in semiconductors, the model of charge-particles transport in one-dimensional semiconductors described by a generalized Langevin equation (GLE) driven by a intrinsic fractional Gaussian noise is proposed in this paper. The analytical expression of the average charged particle velocity, the differential mobility, the conductivity of charge-particles, the two-time correlation function of the velocity fluctuation and the power spectral of total current density fluctuation have been derived. Furthermore, the model of motion for the charge-particle subjected to an electric field and a magnetic field governed by GLE is introduced. The expressions of mean values and variances of charged particle velocity, Fokker–Planck equation of charge-particle motion, the asymptotic behaviors of the relaxation functions have been obtained. Under the Hall effect, the Hall angle, the Hall coefficient, as well as the electrical resistivity also have been studied.

Keywords: Generalized Langevin equation; Fractional Gaussian noise; Semiconductor; Hall effect (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:phsmap:v:535:y:2019:i:c:s0378437119313482

DOI: 10.1016/j.physa.2019.122339

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