Grain boundary effects on Schottky barrier height of Au/P-polysilicon diodes

S.A. Al Kuhaimi

Renewable Energy, 1998, vol. 14, issue 1, 165-172

Abstract: Schottky-barrier diodes were fabricated by evaporation of gold layers onto p-polycrystalline silicon wafers. Comparing the surface morphology of the substrate with the electronic and optoelectronic behavior of the Schottky diode, we are able to identify the influence of the grain boundaries. The current - voltage characteristics at different temperatures, spectral response, and Fowler's plot of photoelectronic measurements were investigated. It is found that the Schottky barrier height, ф, for Au/polycrystalline Si (P- type) depends on the grain boundary density dB, which is defined as the length of grain boundary on the surface per unit area (inversely proportional to the average grain size).

Date: 1998
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:14:y:1998:i:1:p:165-172

DOI: 10.1016/S0960-1481(98)00063-9

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