Recent developments in high eficiency photovoltaic cells

Satyen K. Deb

Renewable Energy, 1998, vol. 15, issue 1, 467-472

Abstract: Enormous progress has been made in recent years on a number of photovoltaic materials and devices in terms of conversion efficiencies. Efficiencies in the range of 18%–24% have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Ultrahigh-efficiency (>30%) photovoltaic (PV) cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys like gallium indium phosphide (GaInP2). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly for space applications. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a brief overview of the recent progress in PV cell efficiencies based on these materials and devices.

Keywords: Thin films; solar cells; photovoltaics; amorphous silicon; copper gallium indium diselenide; cadmium telluride; gallium arsenide (search for similar items in EconPapers)
Date: 1998
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Citations: View citations in EconPapers (2)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:15:y:1998:i:1:p:467-472

DOI: 10.1016/S0960-1481(98)00206-7

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