Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

H Yakubu and P Thilakan

Renewable Energy, 2000, vol. 20, issue 2, 155-165

Abstract: Thin films of indium tin oxide (ITO) have been deposited on fused quartz substrates by the spray deposition and rf-magnetron sputtering methods and their optical and electrical properties investigated. The junction properties of fabricated ITO/pCdTe and ITO/pInP structures have also been studied and their electrical properties presented. It is established that the deposited ITO films have a lattice constant of 10.14 Å and grow in cubic modifications along the (400) direction. Their transmittance value rises up to between 85% and 90% and extends well beyond the visible range of the spectrum. In the forward direction of the ITO/pCdTe structure, it is suggested that tunnelling dominated processes determine the current flow mechanism. Recombination currents at the interface region and thermionic-emission currents, however, dominate in the ITO/pInP structure at low bias and high bias respectively. The two structures can best be described as heterojunctions.

Keywords: Heterojunction; Indium tin oxide; Indium phosphide; Cadmium telluride (search for similar items in EconPapers)
Date: 2000
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:20:y:2000:i:2:p:155-165

DOI: 10.1016/S0960-1481(99)00097-X

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