The influence of annealing conditions on the efficiency of phosphorous gettering in CZ-Si for solar cell applications

Abdalla A Alnajjar

Renewable Energy, 2000, vol. 20, issue 4, 445-452

Abstract: The effect of the annealing ambient on the efficiency of the phosphorous gettering process for Czochralski (CZ) silicon wafers is investigated in this paper. Phosphorous is diffused from a POCl3 source at different temperatures into single-crystal p-type silicon wafers having a resistivity of around 1 ohm/cm. This is followed by an additional heat treatment in either oxidizing (wet and dry oxide) or in inert (argon) ambient. The laser microwave photoconductivity decay method is used to monitor the changes in the minority carrier lifetime after the phosphorous diffusion and the subsequent annealing. Furthermore, solar cells are fabricated on the treated samples in order to correlate the lifetime measurements with the illuminated I-V characteristics of the cells.

Keywords: Phosphorous gettering; Annealing; Minority carrier lifetime; Solar cell (search for similar items in EconPapers)
Date: 2000
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:20:y:2000:i:4:p:445-452

DOI: 10.1016/S0960-1481(99)00073-7

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