Infrared response and quantum efficiency of In-doped silicon (n) structure

Wagah F Mohamed and Khalid K Mohammed

Renewable Energy, 2000, vol. 21, issue 3, 323-331

Abstract: In this paper the indium will be examined to be used as an electrical and optical dopant with the n-type silicon wafer to fabricate the indium-doped silicon (n) structure. The subgap response of the resulted structure is particularly strong and extends up to wavelengths of 1100 nm and above, while the response of the structure is very poor at the visible region. The structure has a maximum external and internal quantum efficiency at awavelength equal to 1100 nm.

Date: 2000
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:21:y:2000:i:3:p:323-331

DOI: 10.1016/S0960-1481(00)00097-5

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