Optical properties of chemically deposited Bi2S3 thin films

Ala A.J. Al-Douri and Maria P. Madik

Renewable Energy, 2000, vol. 21, issue 3, 411-416

Abstract: The optical properties of chemically deposited Bi2S3 have been calculated using the (T, R) method. The special distribution of the absorption coefficient shows the existence of an indirect energy gap and gives the values of Eg=1.43 eV and the Ep=0.51 eV, suggesting an allowed non-vertical absorption. The (ε1,hν) relation shows the direct and indirect transition between indirect valleys at 2.07 and 1.24 eV, respectively.

Date: 2000
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:21:y:2000:i:3:p:411-416

DOI: 10.1016/S0960-1481(00)00082-3

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