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Influence of the temperature on the intrinsic parameters of thin-film photovoltaic modules

Michel Piliougine, Luis Enrique Garcia-Marrero, Kari Lappalainen and Giovanni Spagnuolo

Renewable Energy, 2025, vol. 240, issue C

Abstract: The electrical parameters, the ideality diode factor and the parasitic resistances of a photovoltaic module can be estimated from its current–voltage (I–V) curve. However, there are only very few studies focused on thin-film devices, that could have a thermal behavior different from crystalline silicon technologies. This study analyzes the variation of these parameters from a set of current–voltage curves of several commercial modules from different technologies: single-crystalline silicon (sc-Si), multi-crystalline silicon (mc-Si), amorphous silicon (a-Si), tandem of micro-crystalline silicon and amorphous silicon (a-Si/μc-Si), tandem of cadmium selenide and cadmium telluride (CdS/CdTe), and copper indium selenide (CIS).

Keywords: Diode ideality factor; Thin film; Parallel resistance; Series resistance; Single diode model (search for similar items in EconPapers)
Date: 2025
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:240:y:2025:i:c:s0960148124021360

DOI: 10.1016/j.renene.2024.122068

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