Lattice parameter and density of Ge–Si solid solutions

M.F.a Alias, N.n Rammo and M.n Makadsi

Renewable Energy, 2001, vol. 24, issue 3, 347-351

Abstract: Solid solutions of the Ge–Si system have been prepared by reaction under vacuum and gravity of the constituent elements followed by different quenching procedures. Least-squares refinement to the lattice parameters of the Ge–Si phase has been established in the composition range 0.5–0.9 at% Si. Almost homogeneous alloys were obtained by rapid quenching in liquid nitrogen, whereas pseudo-homogeneous alloys occur as an intermediate stage when quenched in water.

Date: 2001
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:24:y:2001:i:3:p:347-351

DOI: 10.1016/S0960-1481(01)00015-5

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