FT-IR and XPS analysis of a-Si1-xGex:H thin films

M.N. Makadsi, M.F.A. Alias, A.A. Essa and H.R. AI-Azawi

Renewable Energy, 2003, vol. 28, issue 6, 975-984

Abstract: Silicon–Germanium alloys have been prepared in an evacuated fused silica tube, and by thermal evaporation amorphous Si1-xGex:H thin films were deposited at different preparation conditions such as deposition temperature (Td), dopant concentration of aluminum (Al) and arsenic (As) and Ge content (x). Fourior transform infrared (FT-IR) investigations showed the existence of all the expected stretching and bending modes of (Si-H)n and (Ge-H)n. The X-ray photoemission spectroscopy (XPS) exhibited the existence of oxygen:carbon and hydrogen atoms on the Si-Ge surface which led to a shift in Si-2p and Ge-3p core level for pure and doped a-Si1-xGex:H thin films with aluminum and arsenic.

Date: 2003
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

Downloads: (external link)
http://www.sciencedirect.com/science/article/pii/S0960148102000617
Full text for ScienceDirect subscribers only

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:28:y:2003:i:6:p:975-984

DOI: 10.1016/S0960-1481(02)00061-7

Access Statistics for this article

Renewable Energy is currently edited by Soteris A. Kalogirou and Paul Christodoulides

More articles in Renewable Energy from Elsevier
Bibliographic data for series maintained by Catherine Liu ().