The effects of temperature and light concentration on the GaInP/GaAs multijunction solar cell’s performance

M.Y. Feteha and G.M. Eldallal

Renewable Energy, 2003, vol. 28, issue 7, 1097-1104

Abstract: Monolithic Ga0.49In0.51P/GaAs cascade solar cells with a p+/n+ GaAs tunnel junction were grown by MOCVD technique. The variation of the photovoltage, photocurrent, fill factor, efficiency, I–V characteristics and spectral response under different temperatures (25–75 °C), and light intensity values (1–40 sun), were investigated experimentally.

Date: 2003
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:28:y:2003:i:7:p:1097-1104

DOI: 10.1016/S0960-1481(02)00211-2

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