18.5% AM1.5 efficiency GaAs solar cell grown by metal organic vapor phase epitaxy: a first step to realize III–V multi-junction cells

A. Zaouk, A. Rudra, P. Basmaji, J.F. Carlin and P. Gibart

Renewable Energy, 1992, vol. 2, issue 4, 497-499

Abstract: p-GaAs/n-GaAs single bandgap solar cells with a GaAs1−xAlxAs window layer have been grown by metal organic vapor phase epitaxy (M.O.V.P.E.). This is the first step to realize a cascade solar cell with a tunnel junction in order to increase the efficiency. The conversion efficiency reached was 18.6% at AM1.5 and a fill factor of 81% was measured.

Date: 1992
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:2:y:1992:i:4:p:497-499

DOI: 10.1016/0960-1481(92)90087-J

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