Electrochemical deposition of Zn3P2 thin film semiconductors on tin oxide substrates

M. Soliman, A.B. Kashyout, M. Osman and M. El-Gamal

Renewable Energy, 2005, vol. 30, issue 12, 1819-1829

Abstract: Zn3P2 semiconductor thin films were prepared by electrodeposition technique form aqueous solutions. The deposition mechanism was investigated by cyclic voltammetry technique. Crystal structure, morphology and composition of as deposited and annealed Zn3P2 thin films grown on SnO2/glass substrates were determined by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis. X-ray diffraction data indicated the formation of Zn3P2 as the predominant phase for both as-deposited and annealed films. The compositions of the deposited films were controlled by the bath temperature, deposition potential and Zn/P ratio in the solution.

Keywords: Thin films; Semiconductors; Zn3P2; Electrodeposition (search for similar items in EconPapers)
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:30:y:2005:i:12:p:1819-1829

DOI: 10.1016/j.renene.2005.01.004

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