The influence of defects on short circuit current density in p-i-n silicon solar cell

Wagah F. Mohamad and Alhan M. Mustafa

Renewable Energy, 2005, vol. 30, issue 2, 187-193

Abstract: The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n Solar cell, as a function of the thickness of i-layer. It is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer.

Keywords: Pin solar cells; a-si; H solar cells (search for similar items in EconPapers)
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:30:y:2005:i:2:p:187-193

DOI: 10.1016/j.renene.2004.03.012

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