Numerical simulation of the impurity photovoltaic effect in silicon solar cells

S. Khelifi, J. Verschraegen, M. Burgelman and A. Belghachi

Renewable Energy, 2008, vol. 33, issue 2, 293-298

Abstract: Recently, the impurity photovoltaic effect (IPV) was proposed to improve the solar cell performance. Free electron–hole pairs can be generated in a two-step process involving an impurity level in the energy gap and two lower-energy photons: first electrons are optically excited from the valence band to the defect level and then from the defect level to the conduction band. The IPV effect will thus enhance the long-wavelength response of the cell.

Keywords: Silicon solar cell; IPV effect; SCAPS-1D; Light trapping (search for similar items in EconPapers)
Date: 2008
References: View complete reference list from CitEc
Citations: View citations in EconPapers (3)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:33:y:2008:i:2:p:293-298

DOI: 10.1016/j.renene.2007.05.027

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