Piezoelectric photo-thermal study of GaAs single-quantum well embedded in GaAs/AlAs short-period superlattlices

P. Wang, T. Nakagawa, A. Fukuyama, Y. Akashi, K. Fujiwara and T. Ikari

Renewable Energy, 2008, vol. 33, issue 2, 304-308

Abstract: The piezoelectric photo-thermal (PPT) and the surface photo-voltage (SPV) spectra of GaAs/AlAs short-period superlattices (SPS)-confined GaAs single-quantum well (SQW) were measured. The electron nonradiative transitions within GaAs-SQW and subband of SPS were observed in the room-temperature PPT spectrum. At low temperature (81K), the PPT and SPV peaks originated from the exciton transition of e1-hh1 and e1-lh1 within GaAs-SQW were observed. These peak intensities showed the opposite behavior followed by a photo-quenching (PQ) of EL2 existing in GaAs substrate. It was found that EL2 in the substrate exerted an influence on the carrier transition mechanisms within GaAs-SQW and the electron nonradiative paths through EL2 were clearly discussed by the PPT and SPV measurements.

Keywords: Piezoelectric photo-thermal spectroscopy; Nonradiative transitions; Surface photo-voltage spectroscopy; GaAs/AlAs short-period superlattices; GaAs-SQW (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:33:y:2008:i:2:p:304-308

DOI: 10.1016/j.renene.2007.05.010

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