The structural ordering of thin silicon films at the amorphous to nano-crystalline phase transition by GISAXS and Raman spectroscopy

D. Gracin, K. Juraic, A. Gajovic, P. Dubcek, C. Devilee, H.J. Muffler, W.J. Soppe and S. Bernstorff

Renewable Energy, 2008, vol. 33, issue 2, 326-330

Abstract: Thin silicon films were deposited by the plasma-enhanced chemical vapour deposition method using microwave (MW) and standard radio frequency (RF) gas discharge in silane gas diluted by hydrogen in the range that produces a mixture of amorphous and crystalline phases. The samples were analysed by Raman spectroscopy and grazing incidence small-angle X-ray scattering (GISAXS), while the threshold for the transition between the amorphous and crystalline phase was checked by the change in electrical conductivity. The crystalline fraction, estimated by Raman spectroscopy, varied between 0% and 70% while the individual crystal sizes were between 3 and 9nm. However, the size distribution was broad suggesting also the existence of smaller and larger crystals.

Keywords: Nanocrystalline silicon; GISAXS; Raman spectroscopy (search for similar items in EconPapers)
Date: 2008
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Citations: View citations in EconPapers (1)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:33:y:2008:i:2:p:326-330

DOI: 10.1016/j.renene.2007.05.015

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