Temperature effect on the electrical properties of undoped and vanadium-doped ZnTe thin films

M.S. Hossain, R. Islam and K.A. Khan

Renewable Energy, 2008, vol. 33, issue 4, 642-647

Abstract: Vanadium-doped ZnTe films of composition 0 to 10wt%V, were prepared onto glass substrate by e-beam evaporation of the element in vacuum at ∼8×10−4Pa. The effects of various deposition conditions on the electrical properties of the films have been studied in detail. The deposition rate of the ZnTe films was at about 2.05nms−1. X-ray diffraction (XRD) study shows that the as-deposited ZnTe films are amorphous in nature.

Keywords: ZnTe:V thin films; E-beam technique; Temperature dependence of resistivity; Electrical conductivity; Activation energy; Thermoelectric power (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:33:y:2008:i:4:p:642-647

DOI: 10.1016/j.renene.2007.04.003

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