Solution growth of chalcopyrite compounds single crystal

Akira Nagaoka, Yoshitaro Nose, Hideto Miyake, Michael A. Scarpulla and Kenji Yoshino

Renewable Energy, 2015, vol. 79, issue C, 127-130

Abstract: I–III–VI2 chalcopyrite compound Cu(Inx, Ga1−x)Se2 (CIGS) single crystal were successfully grown by traveling heater method (THM). The powder X-ray diffraction (XRD) pattern of the CIGS showed preferred orientations of (112), (220) and (312) planes, confirming the chalcopyrite structure. In Raman spectra, the A1 mode peaks expected for CIGS were observed, and no secondary phases were observed. The full-width at half-maximum (FWHM) of the X-ray rocking curve (XRC) for the (112) oriented CIGS single crystal is 103 arcsec. The composition of the CIGS single crystal was homogeneous and the stoichiometric ratio of CIGS was found to be slightly Cu-poor, In-rich, Ga-rich and Se-poor. The good-quality single-phase CIGS single crystals can be obtained from these results.

Keywords: CIGS; Chalcopyrite compound; Traveling heater method (THM); Solution growth (search for similar items in EconPapers)
Date: 2015
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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:79:y:2015:i:c:p:127-130

DOI: 10.1016/j.renene.2014.10.015

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