c-Si solar cells formed from spin-on phosphoric acid and boric acid

Akash Yadav, Gajendra Singh, Reza Nekovei and R. Jeyakumar

Renewable Energy, 2015, vol. 80, issue C, 80-84

Abstract: This paper reports the fabrication of c-Si based solar cells using spin-on dopants. Solar cells were developed by texturing both surfaces of the c-Si, and forming the p–n junction by spin-coating the n-type dopant followed by rapid thermal processing (RTP). For back surface field formation on the rear side, a similar spin-coating step was undertaken for one cell and e-beam Al deposition for the other. In the case of double-sided spin-coated cell, simultaneous p–n junction and back surface field were formed in one RTP cycle. Without using high performance features in the device, double-sided spin-on doped cell showed Voc of 600 ± 0.01 mV, Jsc of 33.1 ± 0.03 mA/cm2, FF of 74.26 ± 0.06% and efficiency of 14.74%. As compared to single-sided spin-on doped cell, an improvement in efficiency of about 1.3% has been obtained which can be attributed to boron back surface field. Double-sided spin-on process significantly reduces thermal budget and improves throughput. Besides texturization, high efficiency features have not been used in the device. The results clearly demonstrate that c-Si based solar cells are potentially cost effective to manufacture.

Keywords: Low cost c-Si solar cell; Spin-on doped process; External quantum efficiency; Solar cell characterization; Boron back surface field; Texturization (search for similar items in EconPapers)
Date: 2015
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Citations: View citations in EconPapers (1)

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Persistent link: https://EconPapers.repec.org/RePEc:eee:renene:v:80:y:2015:i:c:p:80-84

DOI: 10.1016/j.renene.2015.01.055

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