A Brief Review of Growth Techniques for Obtaining of III-V Semiconductor Compounds

Erick Gastellóu, G. García, A. M. Herrera, C. Morales, R. García, G. A. Hirata, M. Robles, J. A. Rodríguez and I. E. García

European Journal of Engineering and Technology Research, 2019, vol. 4, issue 9, 17-21

Abstract: Electronic devices have essential importance in our quality of life. Our species has multiple comforts and benefits obtained by current technology, such as microelectronics, optoelectronics, and nanotechnology. However, few are interested in the different physical phenomena that are behind our technology. This paper presents a brief review of four growth techniques for the obtaining of III-V semiconductors compounds. Techniques such as metalorganic chemical vapor deposition, hot filament chemical vapor deposition, liquid phase epitaxy, and molecular beam epitaxy are described in a simple way to motivate the understanding of the theoretical concepts that make operated our technology.

Keywords: Growth; Layers; Epitaxy; Semiconductor Compound (search for similar items in EconPapers)
Date: 2019
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
https://eu-opensci.org/index.php/ejeng/article/view/61477 Abstract page (text/html)
https://eu-opensci.org/index.php/ejeng/article/download/61477/12227 Full text (application/pdf)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:epw:ejeng0:v:4:y:2019:i:9:id:61477

DOI: 10.24018/ejeng.2019.4.9.1477

Access Statistics for this article

More articles in European Journal of Engineering and Technology Research from European Open Science
Bibliographic data for series maintained by Support ().