Fractional-Order Memristor Emulator Circuits

C. Sánchez-López, V. H. Carbajal-Gómez, M. A. Carrasco-Aguilar and I. Carro-Pérez

Complexity, 2018, vol. 2018, 1-10

Abstract:

This brief leads the synthesis of fractional-order memristor (FOM) emulator circuits. To do so, a novel fractional-order integrator (FOI) topology based on current-feedback operational amplifier and integer-order capacitors is proposed. Then, the FOI is substituting the integer-order integrator inside flux- or charge-controlled memristor emulator circuits previously reported in the literature and in both versions: floating and grounded. This demonstrates that FOM emulator circuits can also be configured at incremental or decremental mode and the main fingerprints of an integer-order memristor are also holding up for FOMs. Theoretical results are validated through HSPICE simulations and the synthesized FOM emulator circuits can easily be reproducible. Moreover, the FOM emulator circuits can be used for improving future applications such as cellular neural networks, modulators, sensors, chaotic systems, relaxation oscillators, nonvolatile memory devices, and programmable analog circuits.

Date: 2018
References: View references in EconPapers View complete reference list from CitEc
Citations: View citations in EconPapers (2)

Downloads: (external link)
http://downloads.hindawi.com/journals/8503/2018/2806976.pdf (application/pdf)
http://downloads.hindawi.com/journals/8503/2018/2806976.xml (text/xml)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:hin:complx:2806976

DOI: 10.1155/2018/2806976

Access Statistics for this article

More articles in Complexity from Hindawi
Bibliographic data for series maintained by Mohamed Abdelhakeem ().