A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

D. Leong, M. Harry, K. J. Reeson () and K. P. Homewood ()
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D. Leong: University of Surrey
M. Harry: University of Surrey
K. J. Reeson: University of Surrey
K. P. Homewood: University of Surrey

Nature, 1997, vol. 387, issue 6634, 686-688

Abstract: Abstract Although silicon has long been the material of choice for most microelectronic applications, it is a poor emitter of light (a consequence of having an ‘indirect’ bandgap), so hampering the development of integrated silicon optoelectronic devices. This problem has motivated numerous attempts to develop silicon-based structures with good light-emission characteristics1, particularly at wavelengths (∼1.5 μm) relevant to optical fibre communication. For example, silicon–germanium superlattice structures2 can result in a material with a pseudo-direct bandgap that emits at ∼1.5 μm, and doping silicon with erbium3 introduces an internal optical transition having a similar emission wavelength, although neither approach has led to practical devices. In this context, β-iron disilicide has attracted recent interest4,5,6,7,8,9,10,11,12 as an optically active, direct-bandgap material th might be compatible with existing silicon processing technology. Here we report the realization of a light-emitting device operating at 1.5 μm that incorporates β-FeSi2 into a conventional silicon bipolar junction. We argue that this result demonstrates the potential of β-FeSi2 as an important candidate for a silicon-based optoelectronic technology.

Date: 1997
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DOI: 10.1038/42667

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