Pattern formation in semiconductors

V. V. Bel'kov, J. Hirschinger, V. Novák (), F.-J. Niedernostheide, S.D. Ganichev and W. Prettl
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V. V. Bel'kov: Institut für Experimentelle und Angewandte Physik, Universität Regensburg
J. Hirschinger: Institut für Experimentelle und Angewandte Physik, Universität Regensburg
V. Novák: Institute of Electrical Engineering, AV ČR
F.-J. Niedernostheide: Institut für Experimentelle und Angewandte Physik, Universität Regensburg
S.D. Ganichev: Institut für Experimentelle und Angewandte Physik, Universität Regensburg
W. Prettl: Institut für Experimentelle und Angewandte Physik, Universität Regensburg

Nature, 1999, vol. 397, issue 6718, 398-398

Abstract: Abstract In semiconductors, nonlinear generation and recombination processes of free carriers and nonlinear charge transport can give rise to non-equilibrium phase transitions1, 2. At low temperatures, the basic nonlinearity is due to the autocatalytic generation of free carriers by impact ionization of shallow impurities. The electric field accelerates free electrons, causing an abrupt increase in free carrier density at a critical electric field. In static electric fields, this nonlinearity is known to yield complex filamentary current patterns bound to electric contacts3.

Date: 1999
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DOI: 10.1038/17040

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