Epitaxial diamond growth on sapphire in an oxidizing environment

Mamoru Yoshimoto (), Kenji Yoshida, Hideaki Maruta, Yoshiko Hishitani, Hideomi Koinuma, Shigeru Nishio, Masato Kakihana and Takeshi Tachibana
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Mamoru Yoshimoto: Materials and Structures Laboratory, Tokyo Institute of Technology
Kenji Yoshida: Materials and Structures Laboratory, Tokyo Institute of Technology
Hideaki Maruta: Materials and Structures Laboratory, Tokyo Institute of Technology
Yoshiko Hishitani: Materials and Structures Laboratory, Tokyo Institute of Technology
Hideomi Koinuma: Materials and Structures Laboratory, Tokyo Institute of Technology
Shigeru Nishio: Materials and Structures Laboratory, Tokyo Institute of Technology
Masato Kakihana: Materials and Structures Laboratory, Tokyo Institute of Technology
Takeshi Tachibana: Electronics & Information Technology Laboratory, Kobe Steel Ltd. Takatsukadai

Nature, 1999, vol. 399, issue 6734, 340-342

Abstract: Abstract Thin films of diamond are of interest for technological applications such as hard coatings, heat sinks in electronic devices and miniaturized vacuum diodes1,2,3,4. They are typically produced by chemical vapour deposition, and the presence of atomic hydrogen has been considered crucial for the growth of the diamond crystals5,6,7,8,9. Some studies have claimed diamond film growth in a hydrogen-free environment10,11,12,13, but questions remained about the growth conditions in those cases. Here we report the nucleation and growth of diamond by vapour deposition in a hydrogen-free, pure oxygen environment to form crystals that are heteroepitaxially aligned on a single-crystal sapphire substrate. In other words, we are able to achieve diamond growth under conditions where the oxidative ‘etching’ of carbon must compete with its deposition. By choosing a temperature range that results in preferential oxidation of non-diamond (graphitic) carbon species to that of diamond, we are able to achieve the accumulation of diamond.

Date: 1999
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DOI: 10.1038/20653

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