Lanthanum-substituted bismuth titanate for use in non-volatile memories

B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh (), J. Lee and W. Jo
Additional contact information
B. H. Park: Seoul National University
B. S. Kang: Seoul National University
S. D. Bu: Seoul National University
T. W. Noh: Seoul National University
J. Lee: Sung Kyun Kwan University
W. Jo: LG Corporate Institute of Technology

Nature, 1999, vol. 401, issue 6754, 682-684

Abstract: Abstract Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest1,2 in developing non-volatile memories that use ferroelectric thin films—‘ferroelectric random access memories’, or FRAMs—in which information is stored in the polarization state of the ferroelectric material. To realize a practical FRAM, the thin films should satisfy the following criteria: compatibility with existing dynamic random access memory technologies, large remnant polarization (Pr) and reliable polarization-cycling characteristics. Early work focused on lead zirconate titanate (PZT) but, when films of this material were grown on metal electrodes, they generally suffered from a reduction of Pr (‘fatigue’) with polarity switching. Strontium bismuth tantalate (SBT) and related oxides have been proposed to overcome the fatigue problem3, but such materials have other shortcomings, such as a high deposition temperature. Here we show that lanthanum-substituted bismuth titanate thin films provide a promising alternative for FRAM applications. The films are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650 °C and their values of Pr are larger than those of the SBT films.

Date: 1999
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DOI: 10.1038/44352

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