Injection and detection of a spin-polarized current in a light-emitting diode

R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag and L. W. Molenkamp ()
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R. Fiederling: Physikalisches Institut, EP III, Universität Würzburg
M. Keim: Physikalisches Institut, EP III, Universität Würzburg
G. Reuscher: Physikalisches Institut, EP III, Universität Würzburg
W. Ossau: Physikalisches Institut, EP III, Universität Würzburg
G. Schmidt: Physikalisches Institut, EP III, Universität Würzburg
A. Waag: Physikalisches Institut, EP III, Universität Würzburg
L. W. Molenkamp: Physikalisches Institut, EP III, Universität Würzburg

Nature, 1999, vol. 402, issue 6763, 787-790

Abstract: Abstract The field of magnetoelectronics has been growing in practical importance in recent years1. For example, devices that harness electronic spin—such as giant-magnetoresistive sensors and magnetoresistive memory cells—are now appearing on the market2. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts3,4, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups5,6 have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

Date: 1999
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DOI: 10.1038/45502

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