Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres

Alvaro Blanco, Emmanuel Chomski, Serguei Grabtchak, Marta Ibisate, Sajeev John (), Stephen W. Leonard, Cefe Lopez, Francisco Meseguer, Hernan Miguez, Jessica P. Mondia, Geoffrey A. Ozin, Ovidiu Toader and Henry M. van Driel
Additional contact information
Alvaro Blanco: 60 Saint George Street, University of Toronto
Emmanuel Chomski: 80 Saint George Street, University of Toronto
Serguei Grabtchak: 60 Saint George Street, University of Toronto
Marta Ibisate: Unidad Asociada (CSIC-UPV) Universidad Politécnica
Sajeev John: 60 Saint George Street, University of Toronto
Stephen W. Leonard: 60 Saint George Street, University of Toronto
Cefe Lopez: Unidad Asociada (CSIC-UPV) Universidad Politécnica
Francisco Meseguer: Unidad Asociada (CSIC-UPV) Universidad Politécnica
Hernan Miguez: Unidad Asociada (CSIC-UPV) Universidad Politécnica
Jessica P. Mondia: 60 Saint George Street, University of Toronto
Geoffrey A. Ozin: 80 Saint George Street, University of Toronto
Ovidiu Toader: 60 Saint George Street, University of Toronto
Henry M. van Driel: 60 Saint George Street, University of Toronto

Nature, 2000, vol. 405, issue 6785, 437-440

Abstract: Abstract Photonic technology, using light instead of electrons as the information carrier, is increasingly replacing electronics in communication and information management systems. Microscopic light manipulation, for this purpose, is achievable through photonic bandgap materials1,2, a special class of photonic crystals in which three-dimensional, periodic dielectric constant variations controllably prohibit electromagnetic propagation throughout a specified frequency band. This can result in the localization of photons3,4,5,6, thus providing a mechanism for controlling and inhibiting spontaneous light emission that can be exploited for photonic device fabrication. In fact, carefully engineered line defects could act as waveguides connecting photonic devices in all-optical microchips7, and infiltration of the photonic material with suitable liquid crystals might produce photonic bandgap structures (and hence light-flow patterns) fully tunable by an externally applied voltage8,9,10. However, the realization of this technology requires a strategy for the efficient synthesis of high-quality, large-scale photonic crystals with photonic bandgaps at micrometre and sub-micrometre wavelengths, and with rationally designed line and point defects for optical circuitry. Here we describe single crystals of silicon inverse opal with a complete three-dimensional photonic bandgap centred on 1.46 µm, produced by growing silicon inside the voids of an opal template of close-packed silica spheres that are connected by small ‘necks’ formed during sintering, followed by removal of the silica template. The synthesis method is simple and inexpensive, yielding photonic crystals of pure silicon that are easily integrated with existing silicon-based microelectronics.

Date: 2000
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DOI: 10.1038/35013024

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