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Epitaxial diamond polytypes on silicon

Y. Lifshitz, X. F. Duan, N. G. Shang, Q. Li, L. Wan, Ibrahim Bello and S. T. Lee ()
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Y. Lifshitz: Center of Super-Diamond and Advanced Films, City University of Hong Kong
X. F. Duan: Center of Super-Diamond and Advanced Films, City University of Hong Kong
N. G. Shang: Center of Super-Diamond and Advanced Films, City University of Hong Kong
Q. Li: Center of Super-Diamond and Advanced Films, City University of Hong Kong
L. Wan: Beijing Laboratory of Electron Microscopy, Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
S. T. Lee: Center of Super-Diamond and Advanced Films, City University of Hong Kong

Nature, 2001, vol. 412, issue 6845, 404-404

Abstract: Abstract Carbon is unique in the variety of configurations it can adopt with itself and other elements. Here we show how ion beams can be used to nanostructure various diamond polytypes, epitaxially aligning them to a silicon substrate. The ready controllability of ion beams, which are already used to manufacture submicrometre-scale devices, means that our findings should enable new carbon and non-carbon materials to be nanostructured for a host of applications.

Date: 2001
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DOI: 10.1038/35086656

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