Response of a strained semiconductor structure

Feng Liu, Paul Rugheimer, E. Mateeva, D. E. Savage and M. G. Lagally ()
Additional contact information
Feng Liu: University of Utah
Paul Rugheimer: University of Wisconsin
E. Mateeva: Colorado School of Mines
D. E. Savage: University of Wisconsin
M. G. Lagally: University of Wisconsin

Nature, 2002, vol. 416, issue 6880, 498-498

Abstract: Abstract The nanomechanical properties of thin silicon films will become increasingly critical in semiconductor devices, particularly in the context of substrates that consist of a silicon film on an insulating layer (known as silicon-on-insulator, or SOI, substrates). Here we use very small germanium crystals as a new type of nanomechanical stressor to demonstrate a surprising mechanical behaviour of the thin layer of silicon in SOI substrates, and to show that there is a large local reduction in the viscosity of the oxide on which the silicon layer rests. These findings have implications for the use of SOI substrates in nanoelectronic devices.

Date: 2002
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DOI: 10.1038/416498a

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