Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures

Ramesh G. Mani (), Jürgen H. Smet, Klaus von Klitzing, Venkatesh Narayanamurti, William B. Johnson and Vladimir Umansky
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Ramesh G. Mani: Harvard University
Jürgen H. Smet: Max-Planck-Institut für Festkörperforschung
Klaus von Klitzing: Max-Planck-Institut für Festkörperforschung
Venkatesh Narayanamurti: Harvard University
William B. Johnson: University of Maryland
Vladimir Umansky: Weizmann Institute

Nature, 2002, vol. 420, issue 6916, 646-650

Abstract: Abstract The observation of vanishing electrical resistance in condensed matter has led to the discovery of new phenomena such as, for example, superconductivity, where a zero-resistance state can be detected in a metal below a transition temperature Tc (ref. 1). More recently, quantum Hall effects were discovered from investigations of zero-resistance states at low temperatures and high magnetic fields in two-dimensional electron systems (2DESs)2,3,4. In quantum Hall systems and superconductors, zero-resistance states often coincide with the appearance of a gap in the energy spectrum1,2,4. Here we report the observation of zero-resistance states and energy gaps in a surprising setting5: ultrahigh-mobility GaAs/AlGaAs heterostructures that contain a 2DES exhibit vanishing diagonal resistance without Hall resistance quantization at low temperatures and low magnetic fields when the specimen is subjected to electromagnetic wave excitation. Zero-resistance-states occur about magnetic fields B = 4/5 Bf and B = 4/9 Bf, where Bf = 2πfm*/e,m* is the electron mass, e is the electron charge, and f is the electromagnetic-wave frequency. Activated transport measurements on the resistance minima also indicate an energy gap at the Fermi level6. The results suggest an unexpected radiation-induced, electronic-state-transition in the GaAs/AlGaAs 2DES.

Date: 2002
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DOI: 10.1038/nature01277

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