Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy

Martin J. Hÿtch (), Jean-Luc Putaux and Jean-Michel Pénisson
Additional contact information
Martin J. Hÿtch: Centre National de Recherche Scientifique (CNRS)
Jean-Luc Putaux: Centre National de Recherche Scientifique (CNRS)
Jean-Michel Pénisson: Département de Recherche Fondamentale sur la Matière Condensée (DRFMC/SP2M/ME) CEA-Grenoble

Nature, 2003, vol. 423, issue 6937, 270-273

Abstract: Abstract Defects and their associated long-range strain fields are of considerable importance in many areas of materials science1,2. For example, a major challenge facing the semiconductor industry is to understand the influence of defects on device operation, a task made difficult by the fact that their interactions with charge carriers can occur far from defect cores, where the influence of the defect is subtle and difficult to quantify3,4. The accurate measurement of strain around defects would therefore allow more detailed understanding of how strain fields affect small structures—in particular their electronic, mechanical and chemical properties—and how such fields are modified when confined to nanometre-sized volumes. Here we report the measurement of displacements around an edge dislocation in silicon using a combination of high-resolution electron microscopy and image analysis inherited from optical interferometry. The agreement of our observations with anisotropic elastic theory calculations is better than 0.03 Å. Indeed, the results can be considered as an experimental verification of anisotropic theory at the near-atomic scale. With the development of nanostructured materials and devices, we expect the use of electron microscopy as a metrological tool for strain analysis to become of increasing importance.

Date: 2003
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/nature01638 Abstract (text/html)
Access to the full text of the articles in this series is restricted.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:423:y:2003:i:6937:d:10.1038_nature01638

Ordering information: This journal article can be ordered from
https://www.nature.com/

DOI: 10.1038/nature01638

Access Statistics for this article

Nature is currently edited by Magdalena Skipper

More articles in Nature from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().