Universal alignment of hydrogen levels in semiconductors, insulators and solutions

Chris G. Van de Walle () and J. Neugebauer
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Chris G. Van de Walle: Palo Alto Research Center
J. Neugebauer: Fritz-Haber-Institut der Max-Planck-Gesellschaft

Nature, 2003, vol. 423, issue 6940, 626-628

Abstract: Abstract Hydrogen strongly affects the electronic and structural properties of many materials. It can bind to defects or to other impurities, often eliminating their electrical activity: this effect of defect passivation is crucial to the performance of many photovoltaic and electronic devices1,2. A fuller understanding of hydrogen in solids is required to support development of improved hydrogen-storage systems3, proton-exchange membranes for fuel cells, and high-permittivity dielectrics for integrated circuits. In chemistry and in biological systems, there have also been many efforts to correlate proton affinity and deprotonation with host properties4. Here we report a systematic theoretical study (based on ab initio methods) of hydrogen in a wide range of hosts, which reveals the existence of a universal alignment for the electronic transition level of hydrogen in semiconductors, insulators and even aqueous solutions. This alignment allows the prediction of the electrical activity of hydrogen in any host material once some basic information about the band structure of that host is known. We present a physical explanation that connects the behaviour of hydrogen to the line-up of electronic band structures at heterojunctions.

Date: 2003
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DOI: 10.1038/nature01665

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