Non-saturating magnetoresistance in heavily disordered semiconductors
M. M. Parish () and
P. B. Littlewood
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M. M. Parish: University of Cambridge
P. B. Littlewood: University of Cambridge
Nature, 2003, vol. 426, issue 6963, 162-165
Abstract:
Abstract The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of the order of 1 T (refs 1, 2). A surprising exception to this behaviour has recently been observed in doped silver chalcogenides3,4,5, which exhibit an anomalously large, quasi-linear magnetoresistive response that extends down to low fields and survives, even at extreme fields of 55 T and beyond. Here we present a simple model of a macroscopically disordered and strongly inhomogeneous semiconductor that exhibits a similar non-saturating magnetoresistance. In addition to providing a possible explanation for the behaviour of doped silver chalcogenides, our model suggests potential routes for the construction of magnetic field sensors with a large, controllable and linear response.
Date: 2003
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Persistent link: https://EconPapers.repec.org/RePEc:nat:nature:v:426:y:2003:i:6963:d:10.1038_nature02073
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DOI: 10.1038/nature02073
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