A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

Ansheng Liu (), Richard Jones, Ling Liao, Dean Samara-Rubio, Doron Rubin, Oded Cohen, Remus Nicolaescu and Mario Paniccia
Additional contact information
Ansheng Liu: Intel Corporation
Richard Jones: Intel Corporation
Ling Liao: Intel Corporation
Dean Samara-Rubio: Intel Corporation
Doron Rubin: Intel Corporation
Oded Cohen: Intel Corporation
Remus Nicolaescu: Intel Corporation
Mario Paniccia: Intel Corporation

Nature, 2004, vol. 427, issue 6975, 615-618

Abstract: Abstract Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.

Date: 2004
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DOI: 10.1038/nature02310

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